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参数资料
| 型号： | MGFC41V5964 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-18, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 1489K |
| 代理商： | MGFC41V5964 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V5964
5.9 ~ 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
June/2004
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC41V5964_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V6472 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4 ~ 7.2GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC41V7177 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V3436_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET |
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