- 您现在的位置：买卖IC网 > PDF目录95937 > MGFC42V6472A C BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | MGFC42V6472A |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 207K |
| 代理商： | MGFC42V6472A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC42V6472A
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC42V6472A is an internally impedance matched
GaAs power FET especially designed for use in 6.4 - 7.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Internally matched to 50 ohm system
High output power
P1dB = 16W (TYP.) @ f=6.4 - 7.2 GHz
High power gain
GLP =8.0 dB (TYP.) @ f=6.4 - 7.2 GHz
High power added efficiency
P.A.E. = 31 % (TYP.) @ f=6.4 - 7.2 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=31.0dBm S.C.L.
APPLICATION
item 01 : 6.4 - 7.2 GHz band power amplifier
item 51 : 6.4 - 7.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 4.5 (A)
Rg=25 (ohm)
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Ratings
Unit
< Keep safety first in your circuit designs! >
VGDO
Gate to drain voltage
-15
V
Mitsubishi Electric Corporation puts the maximum effort into
VGSO
Gate to source voltage
-15
V
making semiconductor products better and more reliable,
ID
Drain current
15
A
but there is always the possibility that trouble may occur
IGR
Reverse gate current
-40
mA
with them. Trouble with semiconductors may lead to personal
IGF
Forward gate current
84
mA
injury, fire or property damage. Remember to give due
PT
Total power dissipation
93.7
W
consideration to safety when making your circuit designs,
Tch
Channel temperature
175
deg.C
with appropriate measures such as (1)placement of
Tstg
Storage temperature
-65 / +175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
*1 : Tc=25 Deg.C
material or (3)prevention against any malfunction or mishap.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Test conditions
Limits
Unit
Min
Typ
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
9
12
A
Gm
Transconductance
VDS = 3V , ID = 4.4A
-
4
-
S
VGS(off)
Gate to source cut-off voltage
VDS = 3V , ID = 80mA
-2
-3
-4
V
P1dB
Output power at 1dB gain
compression
41.5
42.5
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=4.5A, f=6.4-7.2GHz
7
8
-
dB
ID
Drain current
-
4.5
-
A
PAE
Power added efficiency
-
31
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c) Thermal resistance
*2
Delta Vf method
-
1.6
Deg.C/W
*1 : item -51,2 tone test,Po=31.0dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
MITSUBISHI
June/2004
ELECTRIC
24 +/- 0.3
16.7
20.4 +/- 0.2
OUTLINE DRAW ING Unit:millimeters (inches)
GF-38
4.3 +/- 0.4
1.4
2MIN
R1.2
8.0 +/- 0.2
17.4 +/- 0.2
2MIN
(1)
(1) GATE
(2) SOURCE(FIANGE)
(3) DRAIN
(3)
0.1 +/- 0.05
2.4 +/- 0.2
(2)
0.6 +/- 0.15
相关PDF资料 |
PDF描述 |
|---|---|
| MGFC42V7177-51 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V7177-01 | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC42V7785A | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFC4419G-A13 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MGFC4419G-A12 | K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC42V7177 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
| MGFC42V7785A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC42V7785A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET |
| MGFC4419G | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:InGaAs HEMT Chip |
| MGFC44V3436 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:3.4-3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET |
发布紧急采购，3分钟左右您将得到回复。