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参数资料
| 型号： | MGFC45V5053A |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 16K |
| 代理商： | MGFC45V5053A |
MGFC45V5053A
MITSUBISHI SEMICONDUCTOR <GaAs FET>
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
DESCRIPTION
GaAs power FET especially designed for use in 5.05~5.25
GHz band amplifiers. The hermetically sealed metal-ceramic
The MGFC45V5053A is an internally impedance matched
package guarantees high reliability.
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MITSUBISHI
ELECTRIC
%
*1 : Channel to case
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
Gate to Source cut-off voltage
VDS=3V, IGS=0V
V
Output power at 1dB gain
compression
8
S
Linear power gain
VDS=10V, ID=8A, f=5.05~5.25GHz
45
dBm
P.A.E.
Power added efficiency
34
IM3
*2
3rd order IM distortion
1.0
dBc
Rth (ch-c)
Thermal resistance
0.8
°C/W
Forward gate current
168
mA
Parameter
Ratings
Unit
Gate to drain voltage
-15
V
-15
Gate to source voltage
20
Drain current
-80
A
Channel temperature
-65 ~ +175
°C
5.05~5.25GHz band amplifiers
APPLICATION
*1
GLP
P1dB
VGS (off)
-45
—
Limits
Storage temperature
Total power dissipation
IGF
Symbol
VGDO
VGSO
ID
Tch
Tstg
PT
IGR
Reverse gate current
175
150
W
mA
V
*1 : Tc=25°C
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V
ID=8A
RG=25
Refer to Bias Procedure
*1
—
-42
—
FEATURES (TARGET)
High power gain
GLP=10.0dB (TYP.) @f=5.05~5.25GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=5.05~5.25GHz
Low distortion [item -51]
IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L.
High output power
P1dB=32W (TYP.) @f=5.05~5.25GHz
Internally matched to 50 (
) system
24
—
44
OUTLINE DRAWING
Until : millimeters (inches)
GF-38
(1) GATE
(2) Source (FLANGE)
(3) DRAIN
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (i)placement of
substitutive, auxiliary circuits, (ii)use of non-flammable
material or (iii)prevention against any malfunction or mishap.
°C
Transconductance
Gm
Saturated drain current
IDSS
VDS=3V, ID=8V
VDS=3V, ID=160mA
Vf method
V
-5
—
-2
9.5
dB
—
9
*2 : Item-51,2tone test, Po=34.5dBm Single Carrier Level, f=5.05, 5.15, 5.25GHz, Delta f=5MHz
20.4±0.2 (0.803±0.008)
16.7 (0.658)
0.6±0.15
(0.024±0.006)
24±0.3 (0.945±0.012)
R1.2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC45V5867 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V5964A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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