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参数资料
| 型号： | MGFK41A4045 |
| 元件分类： | 功率晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 263K |
| 代理商： | MGFK41A4045 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFK41A4045
14.0-14.5GHz BAND 12.5W INTERNALLY MATCHED GaAs FET
DESCRIPTION
OUTLINE
The MGFK41A4045 is an internally impedance matched
GaAs power FET especially designed for use in 14.0-14.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
E
Internally impedance matched
E
High output power
P1dB = 41.0dBm(TYP.) @f=14.0-14.5GHz
E
High linear power gain
GLP = 7.0dB(TYP) @
@f=14.0-14.5GHz
APPLICATION
E
For use in 14.0-14.5GHz band amplifiers
QUALITY GRADE
E
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID =3.0 (A)
RG=50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
Symbol
Parameter
Ratings
Unit
VGDO
Gate to drain voltage
-15
V
< Keep safety first in your circuit designs! >
VGSO
Gate to source voltage
-10
V
Mitsubishi Electric Corporation puts the maximum effort into
ID
Drain current
11
A
making semiconductor products better and more reliable,
IGR
Reverse gate current
-36
mA
but there is always the possibility that trouble may occur
IGF
Forward gate current
72
mA
with them.Trouble with semiconductors may lead to personal
PT *1
Total power dissipation
68.2
W
injury, fire or property damage. Remember to give due
Tch
Channel temperature
175
deg.C
consideration to safety when making your circuit designs,
Tstg
Storage temperature
-65 / +175
deg.C
with appropriate measures such as (1)placement of
*1 : Tc=25deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VG=0V
--
8.0
--
A
gm
Transconductance
VDS=0V,ID=3.0A
--
4
--
S
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=42mA
-1.0
-1.5
-4.0
V
P1dB
Output power at 1dB gain
compression
40
41
--
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=3.0A, f=14.0 - 14.5GHz
6.0
7.0
--
dB
P.A.E.
Power added efficiency
--
25
--
%
Rth (Ch-C)
Thermal resistance
Channel to Case
--
1.8
2.2
deg.C/W
June-'04
MITSUBISHI
ELECTRIC
12.0
21.0+/-0.3
10.7
(1)
17.0 +/-0.2
4.5
+/-0.4
0.2
GF-8
1.6
2MIN
(2)
12.9
+/-0.2
2MIN
OUTLINE DRAWING
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.1
2.6
+/-0.2
R-1.6
(3)
(2)
11.3
0.6+/-0.15
Unit : millimeters
(1/5)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFK44A4045 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET |
| MGFK44A4045_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 25W |
| MGFL45V1920 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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