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参数资料
| 型号： | MGFK41A4045 |
| 元件分类： | 功率晶体管 |
| 英文描述： | KU BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 263K |
| 代理商： | MGFK41A4045 |
MGFK41A4045
OUTPUT POWER & POWER ADDED EFFICIENCY@
&@
GAIN@
vs. INPUT POWER
TEST CONDITIONS : Vds(Rfoff)=10V,Ids(RFoff)=3.0A,Rg=50ohm
MITSUBISHI ELECTRIC CORPORATION
June-'04
Freqency=14.0GHz
-5
0
5
10
15
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25
30
35
40
45
20
25
30
35
40
Pin(dBm)
Pout(dBm),
Glp(dB),
PAE(%),
Id(A),
Ig(mA)
Pout
Gain
Id RF
Ig RF
PAE
Freqency=14.2GHz
-5
0
5
10
15
20
25
30
35
40
45
20
25
30
35
40
Pin(dBm)
Pout(dBm),
Glp(dB),
PAE(%),
Id(A),
Ig(mA)
Pout
Gain
Id RF
Ig RF
PAE
Freqency=14.5GHz
-5
0
5
10
15
20
25
30
35
40
45
20
25
30
35
40
Pin(dBm)
Pout(dBm),
Glp(dB),
PAE(%),
Id(A),
Ig(mA)
Pout
Gain
Id RF
Ig RF
PAE
(2/5)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFK44A4045 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 25W INTERNALLY MATCHED GaAs FET |
| MGFK44A4045_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5 GHz BAND / 25W |
| MGFL45V1920 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
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