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参数资料
| 型号： | MGFC45V6472A |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 263K |
| 代理商： | MGFC45V6472A |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFC45V6472A is an internally impedance-matched
GaAs power FET especially designed for use in 6.4-7.2
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=6.4-7.2 GHz
High power gain
GLP = 8 dB (TYP.) @ f=6.4-7.2GHz
High power added efficiency
PAE = 28 % (TYP.) @ f=6.4-7.2GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 6.4-7.2 GHz band power amplifier
item 51 : 6.4-7.2 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8.0 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25 deg.C)
Symbol
Parameter
Ratings
Unit
< Keep safety first in your circuit designs! >
VGDO
Gate to drain voltage
-15
V
Mitsubishi Electric Corporation puts the maximum effort into
VGSO
Gate to source voltage
-15
V
making semiconductor products better and more reliable,
ID
Drain current
25
A
but there is always the possibility that trouble may occur
IGR
Reverse gate current
-80
mA
with them. Trouble with semiconductors may lead to personal
IGF
Forward gate current
168
mA
injury, fire or property damage. Remember to give due
PT
Total power dissipation
150
W
consideration to safety when making your circuit designs,
Tch
Channel temperature
175
deg.C
with appropriate measures such as (1)placement of
Tstg
Storage temperature
-65 / +175
deg.C
substitutive, auxiliary circuits, (2)use of non-flammable
*1 : Tc=25 deg.C
material or (3)prevention against any malfunction or mishap.
ELECTRICAL CARACTERISTICS
(Ta=25 deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V, VGS=0V
-
24
-
A
Gm
Transconductance
VDS=3V, ID=6.4A
-
8
-
V
VGS(off) Gate to source cut-off voltage
VDS = 3V , ID = 120mA
-
-5
V
P1dB
Output power at 1dB gain
compression
44.5
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8.0A, f=6.4-7.2GHz
7
8
-
dB
PAE
Power added efficiency
-
35
-
%
IM3
3rd order IM distortion
*1
-42
-45
-
dBc
Rth(ch-c) Thermal resistance
*2
Delta Vf method
-
1.0
deg.C/W
*1 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=7.2GHz,Delta f=10MHz *2 : Channel-case
June/2004
MITSUBISHI
ELECTRIC
24 +/- 0.3
16.7
20.4 +/- 0.2
O U TLIN E DR AW IN G U nit:m illim ete rs (in ches)
G F -38
4
.3
+
/-
0
.4
1
.4
2
M
IN
R 1.2
8
.0
+
/-
0
.2
17
.4
+
/-
0
.2
2
M
IN
(1 )
(1 ) G AT E
(2 ) S O U RC E (F IAN G E )
(3 ) DR AIN
(3 )
0
.1
+
/-
0
.05
2
.4
+
/-
0
.2
(2 )
0.6 +/- 0.15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFC45V6472A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFC47A4450 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47A7785 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:7.7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET |
| MGFC47B3538B | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:C band Internally Matched Power GaAs FET |
| MGFC47V5864 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:5.8-6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET |
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