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参数资料
| 型号： | MGFC47V5864 |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-53, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 582K |
| 代理商： | MGFC47V5864 |
C-band 50W Power GaAs FET MGFC47V5864 June/2004
S PARAMETERES(T=25deg.C,VDS=10V,ID=8.0A)
f
(GHz)
MAG.
ANG(deg.)
[MAG]
[ANG]
[MAG]
[ANG]
[MAG]
[ANG]
5.60
0.702
-163.8
2.723
10.1
0.024
-23.0
0.225
-76.8
5.65
0.676
-175.6
2.836
0.3
0.027
-42.2
0.194
-86.4
5.70
0.646
171.6
2.932
-9.7
0.030
-57.8
0.164
-97.8
5.75
0.621
158.6
3.011
-19.8
0.036
-71.4
0.132
-111.2
5.80
0.595
144.8
3.072
-30.0
0.040
-82.1
0.106
-129.1
5.85
0.576
131.1
3.091
-40.0
0.044
-95.0
0.087
-148.9
5.90
0.556
116.8
3.108
-49.8
0.049
-105.8
0.077
-175.9
5.95
0.540
102.9
3.111
-59.5
0.053
-117.2
0.075
158.2
6.00
0.528
89.8
3.082
-69.1
0.056
-126.1
0.083
135.8
6.05
0.518
76.5
3.061
-78.5
0.059
-135.8
0.090
119.1
6.10
0.514
64.2
3.033
-87.4
0.062
-144.8
0.102
106.2
6.15
0.510
51.9
2.999
-96.3
0.066
-153.7
0.110
97.2
6.20
0.508
40.5
2.961
-104.9
0.068
-162.2
0.118
87.5
6.25
0.502
29.4
2.933
-113.6
0.072
-170.7
0.125
81.7
6.30
0.498
18.8
2.888
-121.8
0.074
-177.0
0.126
74.6
6.35
0.493
8.4
2.859
-130.1
0.074
174.0
0.128
68.4
6.40
0.486
-2.0
2.817
-138.4
0.076
166.5
0.130
62.4
6.45
0.483
-11.9
2.793
-146.5
0.078
158.4
0.129
57.7
6.50
0.473
-22.4
2.770
-154.6
0.081
152.1
0.126
52.8
6.55
0.471
-33.0
2.751
-163.1
0.082
144.0
0.120
48.6
6.60
0.463
-44.9
2.727
-171.4
0.084
135.6
0.111
44.0
This S-Parameter data show measurements performed on each single-ended FET
MITSUBISHI ELECTRIC CORPORATION
S Parameters(TYP.)
S11
S21
S12
S22
S11
S22
S11,S22
Smith Chart
Z=50
-5.0
-2.0
-1.0
-0.5
-0.2
0.0
5.0
2.0
1.0
0.5
0.2
1.0
0.2
0.5
2.0
5.0
-5
-4
-3
-2
-1
0
1
2
3
4
5
-5
-4
-3
-2
-1
0
1
2
3
4
5
S21
S12
S21,S22
Polar Chart
0.0
0.01
0.02
0.03
0.04
1.0
3.0
2.0
4.0
5.0
0.05
SCALE
FOR
b
S
21
b
SCALE
FOR
b
S
12
b
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