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| 型号： | MGFL45V1920A |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-51, 2 PIN |
| 文件页数： | 3/3页 |
| 文件大小： | 118K |
| 代理商： | MGFL45V1920A |
< L/S band internally matched power GaAs FET >
MGFL45V1920A
1.9 – 2.0 GHz BAND / 32W
Publication Date : Apr., 2011
3
2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFL45V1920A_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| MGFL45V1920A_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 32W |
| MGFL48L1920 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0GHz BAND 60W GaAs FET |
| MGFL48V1920 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |
| MGFL48V1920_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:1.9-2.0 GHz BAND / 60W |
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