- 您现在的位置：买卖IC网 > PDF目录95938 > MGFS45V2735 S BAND, GaAs, N-CHANNEL, RF POWER, JFET PDF资料下载
参数资料
| 型号： | MGFS45V2735 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封装： | HERMETIC SEALED, METAL CERAMIC, GF-38, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 277K |
| 代理商： | MGFS45V2735 |
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFS45V2735
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFS45V2735 is an internally impedance-matched
GaAs power FET especially designed for use in 2.7 - 3.5
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 30W (TYP.) @ f=2.7 - 3.5 GHz
High power gain
GLP = 12 dB (TYP.) @ f=2.7 - 3.5GHz
High power added efficiency
P.A.E. = 36 % (TYP.) @ f=2.7 - 3.5GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
APPLICATION
item 01 : 2.7 - 3.5 GHz band power amplifier
item 51 : 2.7 - 3.5 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 8 (A)
RG=25 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
making semiconductor products better and more reliable,
VGDO
Gate to drain voltage
-15
V
but there is always the possibility that trouble may occur
VGSO
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
ID
Drain current
20
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-80
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
168
mA
with appropriate measures such as (1)placement of
PT *1
Total power dissipation
150
W
substitutive, auxiliary circuits, (2)use of non-flammable
Tch
Channel temperature
175
deg.C
material or (3)prevention against any malfunction or mishap.
Tstg
Storage temperature
-65 / +175
deg.C
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
(Ta=25deg.C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
24
-
A
gm
Transconductance
VDS = 3V , ID = 8A
-
8
-
S
VGS(off)
Saturated drain current
VDS = 3V , ID = 160mA
-2
-
-5
V
P1dB
Output power at 1dB gain
compression
44
45
-
dBm
GLP
Linear power gain
VDS=10V, ID(RF off)=8A, f=2.7 - 3.5GHz
11
12
-
dB
ID
Drain current
-
8
-
A
P.A.E.
Power added efficiency
-
36
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c) *3
Thermal resistance
delta Vf method
-
0.8
1
deg.C/W
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=2.7,3.1,3.5GHz,delta f=10MHz
*3 : Channel-case
June-'04
MITSUBISHI
ELECTRIC
2 4 + /- 0 .3
1 6 .7
2 0 .4 + /- 0 .2
4.
3
+/
-
0.
4
1.
4
G F -38
2M
IN
R 1 .2
O U T LIN E
8.
0
+/
-
0.
2
17
.4
+/
-
0.
2
2M
IN
(1 )
(1 ) ga te
(2 ) sou rce (fla nge )
(3 )dra in
(3 )
0.
1
+/
-
0.
05
2.
4
+/
-
0.
2
(2 )
u n i t : mm
0 .6 + /- 0 .1 5
相关PDF资料 |
PDF描述 |
|---|---|
| MGFS48B2122 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFS48V2527 | S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET |
| MGFS52B2122 | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX36V0717-01 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGFX36V0717 | X BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGFS45V2735_04 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET |
| MGFS45V2735_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.7-3.5 GHz BAND / 30W |
| MGFS48B2122 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.11 - 2.17 GHz BAND 60W GaAs FET |
| MGFS48B2122_11 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.11-2.17 GHz BAND / 60W |
| MGFS48V2527 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:2.5 - 2.7GHz BAND 60W GaAs FET |
发布紧急采购，3分钟左右您将得到回复。