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参数资料
| 型号： | MGP11N60E |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 15 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 2/6页 |
| 文件大小： | 123K |
| 代理商： | MGP11N60E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
μ
Adc)
Temperature Coefficient (Positive)
BVCES
600
—
—
870
—
—
Vdc
mV/
°
C
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
BVECS
ICES
15
—
—
Vdc
—
—
—
—
10
200
μ
Adc
IGES
—
—
50
Adc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 4.0 Adc)
(VGE = 15 Vdc, IC = 4.0 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 8.0 Adc)
VCE(on)
—
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 8.0 Adc)
gfe
—
3.5
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 25 Vdc V
f = 1.0 MHz)
0 Vdc
Cies
Coes
Cres
—
779
—
pF
Output Capacitance
—
81
—
Transfer Capacitance
—
13
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc, L = 300 H,
RG = 20
,
TJ = 25 C)
Energy losses include “tail”
8 0 Ad
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
—
46
—
ns
Rise Time
—
34
—
Turn–Off Delay Time
—
102
—
Fall Time
—
226
—
Turn–Off Switching Loss
—
0.32
—
mJ
Turn–On Delay Time
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc, L = 300 H
°
RG = 20
,
TJ = 125 C)
Energy losses include “tail”
8 0 Ad
—
42
—
ns
Rise Time
—
26
—
Turn–Off Delay Time
td(off)
tf
Eoff
QT
Q1
Q2
—
214
—
Fall Time
—
228
—
Turn–Off Switching Loss
—
0.48
—
mJ
Gate Charge
(VCC = 360 Vdc, IC = 8.0 Adc,
VGE = 15 Vdc)
360 Vdc I
8 0 Adc
—
39.2
—
nC
—
8.7
—
—
17.4
—
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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相关代理商/技术参数 |
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|---|---|
| MGP11N60ED | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MGP14N60E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MGP15N35CL | 功能描述:IGBT 晶体管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N35CL_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| MGP15N38CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
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