| 型号 | 厂商 | 描述 |
| mcr265-6 2 3 4 |
MOTOROLA INC | Thyristors |
| mcr265-7 2 3 4 |
Motorola, Inc. | Thyristors |
| mcr265-8 2 3 4 |
MOTOROLA INC | Thyristors |
| mcr265-9 2 3 4 |
Motorola, Inc. | Thyristors |
| mcs38140pg05c 2 3 4 5 6 7 8 9 10 |
MOTOROLA INC | GPS Digital Correlator |
| md5764802 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
OKI SEMICONDUCTOR CO., LTD. | 8M×8 Dynamic RAM(8M×8动态RAM) |
| mgp11n60e 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgp11n60e 2 3 4 5 6 |
ON SEMICONDUCTOR | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| mgp14n60e 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgp14n60e 2 3 4 5 6 |
ON SEMICONDUCTOR | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| mgp15n60u 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgp15n60u 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor |
| mgp20n14cl 2 3 4 |
MOTOROLA INC | Internally Clamped, N-Channel IGBT |
| mgp20n14cl 2 3 4 |
ON SEMICONDUCTOR | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| mgp20n35cl 2 3 4 5 6 |
MOTOROLA INC | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| mgp20n35cl 2 3 4 5 6 |
ON SEMICONDUCTOR | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| mgp20n60u 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgp20n60u 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor |
| mgr1018 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgr2018ct 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgr2025ct 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgrb1018 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgrb2018ct 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgrb2018 2 3 4 5 6 |
Motorola, Inc. | MINIATURE POWER RELAY |
| mgrb2025ct 2 3 4 5 6 |
MOTOROLA INC | Power Manager Gallium Arsenide Power Rectifier |
| mgsf3442xt1 2 3 4 |
MOTOROLA INC | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| mgsf3442vt1 2 3 4 |
MOTOROLA INC | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| mgsf3455xt1 2 3 4 |
MOTOROLA INC | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| mgsf3455vt1 2 3 4 |
MOTOROLA INC | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| mgto1000 2 3 4 5 6 7 8 |
Motorola, Inc. | CONNECTOR ACCESSORY |
| mgto1200 2 3 4 5 6 7 8 |
Motorola, Inc. | GATE TURN OFF THYRISTORS |
| mgv12n120d 2 3 4 |
Motorola, Inc. | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgw12n120d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgw12n120d 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgw20n60d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgw21n60ed 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgw21n60ed 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor |
| mgw30n60 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mgy20n120d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy20n120d 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy25n120d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy25n120d 2 3 4 5 6 |
ON SEMICONDUCTOR | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy30n60d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy40n60d 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| mgy40n60 2 3 4 5 6 |
MOTOROLA INC | Insulated Gate Bipolar Transistor |
| mhl19936 2 3 4 |
MOTOROLA INC | PCS BAND RF LINEAR LDMOS AMPLIFIER |
| mhl21336 2 3 4 |
MOTOROLA INC | 3G BAND RF LINEAR LDMOS AMPLIFIER |
| mhl8015 2 3 4 |
MOTOROLA INC | UHF Lineat Amplifier |
| mhl8018 2 3 4 |
MOTOROLA INC | UHF Lineat Amplifier |
| mhl8115 2 3 4 |
MOTOROLA INC | UHF Linear Amplifier |