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参数资料
| 型号： | MGW21N60ED |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 1/6页 |
| 文件大小： | 152K |
| 代理商： | MGW21N60ED |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
Industry Standard TO–247 Package
High Speed: Eoff = 65 J/A typical at 125
°
C
High Voltage Short Circuit Capability – 10 s minimum at
125
°
C, 400 V
Low On–Voltage — 2.1 V typical at 20 A, 125
°
C
Soft Recovery Free Wheeling Diode is included in the Package
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
Collector Current
— Continuous @ TC = 90
°
C
Collector Current
— Repetitive Pulsed Current (1)
31
21
42
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
142
1.14
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance
— Junction to Diode
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JC
R
θ
JA
TL
0.88
1.4
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGW21N60ED/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
21 A @ 90
°
C
31 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
CASE 340K–01,
TO–247 AE
C
E
G
G
C
E
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