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参数资料
| 型号： | MGW21N60ED |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 4/6页 |
| 文件大小： | 152K |
| 代理商： | MGW21N60ED |
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
5
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
4000
3200
800
0
QG, TOTAL GATE CHARGE (nC)
25
0
20
16
12
4
0
50
C
15
25
20
125
75
8
V
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 20 A
2400
1600
100
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (
°
C)
–50
0.5
0
,
E
–25
0
25
1.0
2.0
1.5
50
75
100
125
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 20 A
15 A
10 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 20 A
15 A
10 A
,
E
2.5
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Losses versus
Gate Resistance
10
20
0
IC, COLLECTOR CURRENT (AMPS)
0.8
0
5
1.6
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
2.0
0.4
1.2
15
,
E
45
5
RG, GATE RESISTANCE (OHMS)
1.5
1.3
0.9
,
E
0.5
15
25
35
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 20 A
15 A
10 A
1.1
0.7
0.5
0
1.0
2.0
1.5
2.5
5
10
50
30
40
20
3.0
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