- 您现在的位置：买卖IC网 > PDF目录378670 > MGW30N60 (MOTOROLA INC) Insulated Gate Bipolar Transistor PDF资料下载
参数资料
| 型号： | MGW30N60 |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 1/6页 |
| 文件大小： | 214K |
| 代理商： | MGW30N60 |
1
Motorola, Inc. 1995
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 60
J per Amp typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Robust High Voltage Termination
Robust RBSOA
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
50
30
100
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
202
1.61
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
R
θ
JC
R
θ
JA
0.62
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGW30N60/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
30 A @ 90
°
C
50 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
相关PDF资料 |
PDF描述 |
|---|---|
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| MGY30N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGW32415 | 功能描述:DC DC CONVERTER +/-15V 制造商:cosel usa, inc. 系列:MGW 包装:- 零件状态:在售 类型:隔离模块 输出数:2 电压 - 输入（最小值）:18V 电压 - 输入（最大值）:36V 电压 - 输出 1:15V 电压 - 输出 2:-15V 电压 - 输出 3:- 电流 - 输出（最大值）:100mA，100mA 电压 - 隔离:1.5kV 应用:ITE（商业） 特性:OCP 工作温度:-40°C ~ 85°C 效率:83% 安装类型:通孔 封装/外壳:5-SIP 模块 大小/尺寸:0.67" 长 x 0.33" 宽 x 0.47" 高（17.0mm x 8.5mm x 12.0mm） 供应商器件封装:- 标准包装:1 |
| MGW34737101 | 制造商:LG Corporation 功能描述:REFLECTOR |
| MGW34737102 | 制造商:LG Corporation 功能描述:Reflector |
| MGW34812 | 功能描述:DC DC CONVERTER +/-12V 制造商:cosel usa, inc. 系列:MGW 包装:- 零件状态:在售 类型:隔离模块 输出数:2 电压 - 输入（最小值）:36V 电压 - 输入（最大值）:76V 电压 - 输出 1:12V 电压 - 输出 2:-12V 电压 - 输出 3:- 电流 - 输出（最大值）:130mA，130mA 电压 - 隔离:1.5kV 应用:ITE（商业） 特性:OCP 工作温度:-40°C ~ 85°C 效率:82% 安装类型:通孔 封装/外壳:5-SIP 模块 大小/尺寸:0.67" 长 x 0.33" 宽 x 0.47" 高（17.0mm x 8.5mm x 12.0mm） 供应商器件封装:- 标准包装:1 |
| MGW34815 | 功能描述:DC DC CONVERTER +/-15V 制造商:cosel usa, inc. 系列:MGW 包装:- 零件状态:在售 类型:隔离模块 输出数:2 电压 - 输入（最小值）:36V 电压 - 输入（最大值）:76V 电压 - 输出 1:15V 电压 - 输出 2:-15V 电压 - 输出 3:- 电流 - 输出（最大值）:100mA，100mA 电压 - 隔离:1.5kV 应用:ITE（商业） 特性:OCP 工作温度:-40°C ~ 85°C 效率:82% 安装类型:通孔 封装/外壳:5-SIP 模块 大小/尺寸:0.67" 长 x 0.33" 宽 x 0.47" 高（17.0mm x 8.5mm x 12.0mm） 供应商器件封装:- 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。