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参数资料
| 型号： | MGY20N120D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 28 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 254K |
| 代理商： | MGY20N120D |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 160 J per Amp typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
1200
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
28
20
56
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
174
1.39
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θ
JC
R
θ
JC
R
θ
JA
TL
0.7
1.1
35
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGY20N120D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–264
20 A @ 90
°
C
28 A @ 25
°
C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340G–02, Style 5
TO–264
Motorola Preferred Device
G
C
E
C
E
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGY25N120 | 制造商:Motorola Inc 功能描述: |
| MGY25N120D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MGY30N60D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MGY31802402 | 制造商:LG Corporation 功能描述:RIBBON |
| MGY31802403 | 制造商:LG Corporation 功能描述:Ribbon |
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