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参数资料
| 型号： | MGY20N120D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 28 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 254K |
| 代理商： | MGY20N120D |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
dIF/dt = 150 A/
μ
s)
trr
ta
tb
—
114
—
ns
(IF = 20 Adc, VR = 720 Vdc,
—
74
—
—
40
—
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
—
0.68
—
μ
C
Reverse Recovery Time
dIF/dt = 150 A/
μ
s, TJ = 125
°
C)
—
224
—
ns
(IF = 20 Adc, VR = 720 Vdc,
—
149
—
—
75
—
Reverse Recovery Stored Charge
—
2.40
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
13
—
nH
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
VGE = 20 V
TJ = 25
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
12.5 V
17.5 V
15 V
10 V
30
20
0
8
4
0
2
6
40
10
VCE = 10 V
250
μ
s PULSE WIDTH
TJ = 125
°
C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
20
0
15
8
6
5
10
25
°
C
VGE = 15 V
250
μ
s PULSE WIDTH
TJ, JUNCTION TEMPERATURE (
°
C)
1
150
50
0
–50
100
V
IC = 20 A
40
15 A
12
10 A
2
3
4
50
60
14
60
VGE = 20 V
TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
12.5 V
17.5 V
15 V
10 V
30
20
0
8
4
0
2
6
40
10
50
60
9
7
11
13
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相关代理商/技术参数 |
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|---|---|
| MGY25N120 | 制造商:Motorola Inc 功能描述: |
| MGY25N120D | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
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| MGY31802403 | 制造商:LG Corporation 功能描述:Ribbon |
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