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参数资料
| 型号： | MGW12N120D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 2/6页 |
| 文件大小： | 250K |
| 代理商： | MGW12N120D |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
μ
Adc)
Temperature Coefficient (Positive)
BVCES
1200
—
—
870
—
—
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ICES
—
—
—
—
100
2500
μ
Adc
IGES
—
—
250
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 10 Adc)
VCE(on)
—
—
—
2.71
3.78
3.72
3.37
—
4.42
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
gfe
—
12
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Cies
Coes
Cres
—
1003
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
—
126
—
Transfer Capacitance
—
106
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Energy losses include “tail”
td(on)
tr
td(off)
tf
—
74
—
ns
Rise Time
(VCC = 720 Vdc, IC = 10 Adc,
RG = 20
,
TJ = 25
°
C)
—
83
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
—
76
—
Fall Time
—
231
—
Turn–Off Switching Loss
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
—
0.55
1.33
mJ
Turn–On Switching Loss
—
1.21
1.88
Total Switching Loss
—
1.76
3.21
Turn–On Delay Time
Energy losses include “tail”
—
66
—
ns
Rise Time
(VCC = 720 Vdc, IC = 10 Adc,
RG = 20
,
TJ = 125
°
C)
—
87
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
—
120
—
Fall Time
—
575
—
Turn–Off Switching Loss
Eoff
Eon
Ets
QT
Q1
Q2
—
1.49
—
mJ
Turn–On Switching Loss
—
2.37
—
Total Switching Loss
—
3.86
—
Gate Charge
VGE = 15 Vdc)
—
29
—
nC
(VCC = 720 Vdc, IC = 10 Adc,
—
13
—
—
12
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125
°
C)
(IEC = 10 Adc)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
VFEC
—
—
—
2.26
1.37
2.86
3.32
—
4.18
Vdc
(continued)
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