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参数资料
| 型号： | MGW20N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 1/6页 |
| 文件大小： | 246K |
| 代理商： | MGW20N60D |
1
Motorola, Inc. 1995
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 60 J per Amp typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Soft Recovery Free Wheeling Diode is included in the package
Robust High Voltage Termination
Robust RBSOA
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current
— Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
32
20
64
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
142
1.14
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25
°
C, RG = 20
)
10
s
Thermal Resistance
— Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θ
JC
R
θ
JC
R
θ
JA
TL
0.88
2.00
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGW20N60D/D
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–247
20 A @ 90
°
C
32 A @ 25
°
C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
相关PDF资料 |
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| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGW21N60ED | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
| MGW301205 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@2.5A,-5@2.5A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin 制造商:Cosel Usa Inc 功能描述:MG W30 Series 25 W Dual Output +/-5 V 10 V DC/DC Power Supply |
| MGW301205-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin |
| MGW301212 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@1.25A,-12@1.25A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 30 W Dual Output 12 or 24 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 1.25A 30W 6-Pin |
| MGW301212-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 1.25A 30W 6-Pin |
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