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参数资料
| 型号： | MGW20N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 32 A, 600 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 2/6页 |
| 文件大小： | 246K |
| 代理商： | MGW20N60D |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250
μ
Adc)
Temperature Coefficient (Positive)
BVCES
600
—
—
870
—
—
Vdc
mV/
°
C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ICES
—
—
—
—
100
2500
μ
Adc
IGES
—
—
250
nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125
°
C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
—
—
—
2.30
2.20
2.85
2.85
—
3.65
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/
°
C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
gfe
—
12
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Cies
Coes
Cres
—
2280
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
—
165
—
Transfer Capacitance
—
12
—
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Energy losses include “tail”
td(on)
tr
td(off)
tf
—
59
—
ns
Rise Time
(VCC = 360 Vdc, IC = 20 Adc,
RG = 20
,
TJ = 25
°
C)
—
61
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
—
150
—
Fall Time
—
212
—
Turn–Off Switching Loss
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
—
0.60
0.85
mJ
Turn–On Switching Loss
—
0.75
—
Total Switching Loss
—
1.35
—
Turn–On Delay Time
Energy losses include “tail”
—
51
—
ns
Rise Time
(VCC = 360 Vdc, IC = 20 Adc,
RG = 20
,
TJ = 125
°
C)
—
77
—
Turn–Off Delay Time
VGE = 15 Vdc, L = 300 H
—
184
—
Fall Time
—
392
—
Turn–Off Switching Loss
Eoff
Eon
Ets
QT
Q1
Q2
—
1.20
—
mJ
Turn–On Switching Loss
—
1.50
—
Total Switching Loss
—
2.70
—
Gate Charge
VGE = 15 Vdc)
—
74
—
nC
(VCC = 360 Vdc, IC = 20 Adc,
—
19
—
—
27
—
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125
°
C)
(IEC = 20 Adc)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
VFEC
—
—
—
1.50
1.30
1.70
1.90
—
2.15
Vdc
(continued)
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相关代理商/技术参数 |
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|---|---|
| MGW21N60ED | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
| MGW301205 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@2.5A,-5@2.5A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin 制造商:Cosel Usa Inc 功能描述:MG W30 Series 25 W Dual Output +/-5 V 10 V DC/DC Power Supply |
| MGW301205-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 2.5A 25W 6-Pin |
| MGW301212 | 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@1.25A,-12@1.25A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 30 W Dual Output 12 or 24 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 1.25A 30W 6-Pin |
| MGW301212-R | 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 1.25A 30W 6-Pin |
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