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参数资料
| 型号： | MGW12N120D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE |
| 文件页数： | 4/6页 |
| 文件大小： | 250K |
| 代理商： | MGW12N120D |
4
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter and
Collector–to–Emitter Voltage versus Total Charge
Coes
10000
10
25
20
15
5
0
Qg, TOTAL GATE CHARGE (nC)
16
8
0
80
20
0
C
10
TJ = 25
°
C
Cres
Cies
V
4
QT
Q1
Q2
TJ = 25
°
C
IC = 20 A
100
60
40
12
1000
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
RG, GATE RESISTANCE (OHMS)
T
3
1
50
30
20
10
40
2.5
2
VCC = 720 V
VGE = 15 V
TJ = 125
°
C
IC = 10 A
TC, CASE TEMPERATURE (
°
C)
T
2.6
2.4
0.2
150
75
25
0
100
1.8
1.6
1
VCC = 720 V
VGE = 15 V
RG = 20
50
125
IC = 10 A
1.5
7.5 A
5 A
7.5 A
5 A
3
2.2
1.4
1.2
0.6
0.4
2.8
2
0.8
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
2.4
1.8
1
10
9
7
5
2
1.6
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125
°
C
1.2
8
1.4
6
2.2
Figure 5b. High Voltage Capacitance
Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Coes
10
200
150
50
C
100
TJ = 25
°
C
Cres
Cies
100
1000
VGE = 0 V
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