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参数资料
| 型号： | MGY25N120D |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 38 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | CASE 340G-02, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 256K |
| 代理商： | MGY25N120D |
6
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 340G–02
TO–264
ISSUE E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MIN
2.8
19.3
4.7
0.93
1.9
2.2
5.45 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.1
2.15
6.1
2.8
MAX
2.9
20.3
5.3
1.48
2.1
2.4
MIN
1.102
0.760
0.185
0.037
0.075
0.087
0.215 BSC
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
MAX
1.142
0.800
0.209
0.058
0.083
0.102
INCHES
MILLIMETERS
3.0
0.78
18.8
11.4
4.75
2.6
3.5
2.35
6.5
3.2
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 5:
PIN 1.
GATE
COLLECTOR
EMITTER
2.
3.
0.25 (0.010)
M
T B
M
J
H
R
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010)
M
Y Q
S
1
2
3
–B–
–Q–
–Y–
–T–
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