参数资料
型号: MHL21336
厂商: MOTOROLA INC
元件分类: 衰减器
英文描述: 3G BAND RF LINEAR LDMOS AMPLIFIER
中文描述: 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封装: CASE 301AP-02, 4 PIN
文件页数: 1/4页
文件大小: 318K
代理商: MHL21336
1
MHL21336
Motorola, Inc. 2002
The RF Line
Designed for ultra–linear amplifier applications in
50 ohm system
s operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
Third Order Intercept: 45 dBm Typ
Power Gain: 31 dB Typ (@ f = 2140 MHz)
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power
P
in
+5
dBm
Storage Temperature Range
T
stg
–40 to +100
°
C
Operating Case Temperature Range
T
C
–20 to +100
°
C
ELECTRICAL CHARACTERISTICS
(V
DD
= 26 Vdc, T
C
= 25
°
C; 50
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
500
525
mA
Power Gain
(f = 2140 MHz)
G
p
30
31
32
dB
Gain Flatness
(f = 2110–2170 MHz)
G
F
0.15
0.4
dB
Power Output @ 1 dB Comp.
(f = 2140 MHz)
P
out
1 dB
34
35
dBm
Input VSWR
(f = 2110–2170 MHz)
VSWR
in
1.2:1
1.5:1
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
ITO
44
45
dBm
Noise Figure
(f = 2170 MHz)
NF
4.5
5
dB
Order this document
by MHL21336/D
SEMICONDUCTOR TECHNICAL DATA
2110–2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP–02, STYLE 1
REV 3
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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