1
MHL8015 MHL8018
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Line
Designed for linear amplifier applications in 50 ohm systems requiring wide
bandwidth, low noise, and low distortion. Internal DC blocking on RF ports
reduces external component count and related circuit area. This hybrid utilizes
push–pull circuit design.
Supply Voltage: 15 Vdc (MHL8015)
Supply Voltage:
28 Vdc (MHL8018)
Third Order Intercept: 38 dBm Typ
Power Gain: 18.5 dB Typ (@ f = 900 MHz)
Excellent Phase Linearity and Group Delay Characteristics
50 Ohm Input/Output Impedances
ABSOLUTE MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
MHL8015
MHL8018
VCC
18
32
Vdc
RF Input Power
Pin
Tstg
TC
+14
dBm
Storage Temperature Range
–40 to +100
°
C
Operating Case Temperature Range
–20 to +100
°
C
ELECTRICAL CHARACTERISTICS
(TC = +25
°
C; VCC = 15 Vdc (MHL8015), 28 Vdc (MHL8018); 50
System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
MHL8015
MHL8018
IDC
—
—
380
210
410
240
mA
Power Gain
(f = 900 MHz)
PG
FL
17.5
18.5
19.5
dB
Gain Flatness
(f = 40–1000 MHz)
—
1.0
2.0
dB
Power Output @ 1 dB Comp.
(f = 900 MHz)
Pout 1 dB
ITO
25
26
—
dBm
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
37
38
—
dBm
Input/Output VSWR
(f = 40–900 MHz)
(f = 900–1000 MHz)
VSWR
—
—
—
—
2.0:1
2.6:1
Noise Figure, Broadband
(f = 500 MHz)
(f = 1000 MHz)
NF
—
—
6.5
7.5
8.0
9.0
dB
Second Harmonic Distortion (Po = 100 mW, f2H = 1000 MHz)
Second Order Intermodulation Distortion
(Po = 2.75 dBm, f1 = 373 MHz, f2 = 450 MHz)
dso
—
–50
–40
dB
IM2
—
—
–60
dB
Intermodulation Distortion, 3 Tone (f = 860 MHz, Psync = 200 mW)
IM3
—
–60
—
dB
Order this document
by MHL8015/D
SEMICONDUCTOR TECHNICAL DATA
400 mW, 18.5 dB
40–1000 MHz
LINEAR AMPLIFIERS
CASE 448–02
MHL8015, STYLE 2
MHL8018, STYLE 1
REV 1