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参数资料
| 型号： | MGP14N60E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 125K |
| 代理商： | MGP14N60E |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Turn–Off Losses versus
Gate Resistance
Figure 8. Turn–Off Losses versus
Junction Temperature
Figure 9. Turn–Off Losses versus
Collector–To–Emitter Current
Figure 10. Reverse Biased Safe
Operating Area
45
5.0
RG, GATE RESISTANCE (OHMS)
0.8
0.6
0.4
TJ, JUNCTION TEMPERATURE (
°
C)
150
–50
0.2
0
10
15
0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
0.8
0.4
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1.0
100
10
1.0
T
I
0.2
15
25
–25
0
25
0.4
0.8
5.0
10
100
1000
T
T
35
0.6
50
75
100
125
0.6
0.2
1.0
TJ = 125
°
C
VDD = 360 V
VGE = 15 V
IC = 10 A
IC = 7.5 A
IC = 5.0 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 10 A
IC = 7.5 A
IC = 5.0 A
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
RGE = 20
VGE = 15 V
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| MGP15N35CL | 功能描述:IGBT 晶体管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N35CL_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| MGP15N38CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
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