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参数资料
| 型号： | MGP20N35CL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 3/6页 |
| 文件大小： | 200K |
| 代理商： | MGP20N35CL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
IC
IC
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
TJ = 25
°
C
VGE = 10 V
TJ = 125
°
C
0
1
2
3
8
20
10
0
30
40
4
5
6
7
0
2
4
6
8
40
30
20
10
0
3 V
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
IC
VC
TJ, JUNCTION TEMPERATURE (
°
C)
TJ = 125
°
C
VGE = 5 V
–50
0
150
1.8
1.4
1.2
1.0
1.6
2.0
2.2
50
100
1
2
3
4
5
40
30
20
10
0
Figure 5. Capacitance Variation
Figure 6. High Voltage Capacitance Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
C
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
1000
10
1.0
100
1000
100
0
50
75
10000
1000
100
10
1.0
10
9
10
25
100
125
150
175
200
C
VGE = 10 V
5 V
4 V
3 V
5 V
4 V
25
°
C
VCE = 10 V
IC = 20 A
15 A
10 A
TJ = 25
°
C
VCE = 0 V
TJ = 25
°
C
VCE = 0 V
Ciss
Coss
Crss
Ciss
Coss
Crss
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相关代理商/技术参数 |
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| MGP20N36CL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MGP20N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| MGP20N60U | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MGP25-PS | 制造商:SMC Corporation of America 功能描述:SEAL KIT |
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