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参数资料
| 型号： | MGP20N35CL |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 2/6页 |
| 文件大小： | 200K |
| 代理商： | MGP20N35CL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(IClamp = 10 mA, TJ = –40 to 150
°
C)
BVCES
320
350
380
Vdc
Zero Gate Voltage Collector Current
(VCE = 250 V, VGE = 0 V, TJ = 125
°
C)
(VCE = 15 V, VGE = 0 V, TJ = 125
°
C)
Resistance Gate–Emitter (TJ = –40 to 150
°
C)
Gate–Emitter Breakdown Voltage (IG = 2 mA)
Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = –40 to 150
°
C)
Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA)
ICES
—
—
—
—
1.0
200
mA
A
RGE
BVGES
ICES
BVCER
10k
16k
30k
11
13
15
V
—
8
100
mA
26
40
120
V
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150
°
C)
VGE(th)
1.0
0.75
1.7
—
2.4
1.8
V
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150
°
C)
Forward Transconductance (VCE
VCE(on)
—
—
—
1.1
1.4
1.4
1.4
1.9
1.8
V
50 V, IC = 10 A)
gfs
10
16
—
S
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
2800
—
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
—
200
—
Transfer Capacitance
—
25
—
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
VGE = 5 V)
Qg
Qgs
Qgd
td(off)
tf
—
45
80
nC
Gate–Emitter Charge
(VCC = 280 V, IC = 20 A,
—
8.0
—
Gate–Collector Charge
—
20
—
Turn–Off Delay Time
L = 200 H, RG = 1 K )
—
TBD
TBD
μ
s
Fall Time
(VCC = 320 V, IC = 20 A,
—
TBD
TBD
Turn–On Delay Time
L = 200 H, RG = 1 K )
td(on)
tr
—
TBD
TBD
μ
s
Rise Time
(VCC = 14 V, IC = 20 A,
—
TBD
TBD
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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相关代理商/技术参数 |
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|---|---|
| MGP20N36CL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MGP20N40CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| MGP20N60U | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MGP21N60E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
| MGP25-PS | 制造商:SMC Corporation of America 功能描述:SEAL KIT |
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