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参数资料
| 型号： | MGP20N60U |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 120K |
| 代理商： | MGP20N60U |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides fast switching charac-
teristics and results in efficient operation at high frequencies.
Industry Standard TO–220 Package
High Speed Eoff: 67
J/A typical at 125
°
C
Low On–Voltage – 1.7 V typical at 10 A, 125
°
C
Robust High Voltage Termination
ESD Protection Gate–Emitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
600
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
600
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
— Continuous @ TC = 90
°
C
— Repetitive Pulsed Current (1)
31
20
40
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
142
0.89
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
R
θ
JC
R
θ
JA
–55 to 150
°
C
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
1.12
65
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
200
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGP20N60U/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–220
20 A @ 90
°
C
31 A @ 25
°
C
600 VOLTS
VERY LOW
ON–VOLTAGE
CASE 221A–09, Style 9
TO–220AB
C
E
G
G
C
E
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相关代理商/技术参数 |
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| MGP21N60E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
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