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参数资料
| 型号： | MGP20N60U |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 31 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 120K |
| 代理商： | MGP20N60U |
3
Motorola IGBT Device Data
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
6
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
30
50
10
15
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
40
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
1.8
1.7
1.6
1.5
1.3
0
14
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
800
2400
0
QG, TOTAL GATE CHARGE (nC)
0
20
16
12
4
0
60
5
I
C
V
0
3
1
2
4
5
7
11
12
25
50
100
75
C
20
25
15
1600
20
40
80
8
V
20
40
6
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
30
10
I
40
0
3
1
2
4
5
7
20
50
125
150
13
10
8
5
6
9
7
,
20 V
VGE = 10 V
TJ = 25
°
C
15 V
17.5 V
20 V
VGE = 10 V
TJ = 125
°
C
15 V
12.5 V
17.5 V
VCE = 100 V
5.0 S PULSE WIDTH
TJ = 25
°
C
125
°
C
IC = 10 A
7.5 A
5.0 A
VGE = 15 V
80 S PULSE WIDTH
12.5 V
60
50
1.4
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 10 A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGP21N60E | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Insulated Gate Bipolar Transistor |
| MGP25-PS | 制造商:SMC Corporation of America 功能描述:SEAL KIT |
| MGP3002X | 制造商:Siemens 功能描述: |
| MGP3006 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GHz PLL with I2C Bus and Four Chip Addresses |
| MGP3006X | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:GHz PLL with I2C Bus and Four Chip Addresses |
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