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参数资料
| 型号： | MGSF3455XT1 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 1450 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件页数： | 2/4页 |
| 文件大小： | 85K |
| 代理商： | MGSF3455XT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
A)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
5.0
μ
Adc
IGSS
—
—
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
—
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.45 A)
(VGS = 4.5 Vdc, ID = 1.2 A)
rDS(on)
—
—
0.080
0.134
0.100
0.190
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
(VDS = 5.0 V)
(VDG = 5.0 V)
Ciss
Coss
Crss
—
90
—
pF
Output Capacitance
—
50
—
Transfer Capacitance
—
10
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc,D
(DD
VGEN = 10 V, RL = 10
)
1 0 A
td(on)
tr
td(off)
tf
—
10
20
ns
Rise Time
—
15
30
Turn–Off Delay Time
,
—
20
35
Fall Time
—
10
20
Gate Charge
QT
—
3000
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
VSD
—
—
1.0
A
Pulsed Current
Forward Voltage(2)
—
—
5.0
A
—
0.85
—
V
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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