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参数资料
| 型号： | MGP15N60U |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 26 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 120K |
| 代理商： | MGP15N60U |
3
Motorola IGBT Device Data
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
6
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
40
20
35
10
16
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
40
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
1.8
1.7
1.6
1.5
1.4
0
14
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1200
800
400
0
QG, TOTAL GATE CHARGE (nC)
10
0
20
16
12
4
0
40
5
I
C
V
5
25
0
3
1
2
4
5
7
11
12
25
50
100
75
C
20
25
15
1600
20
30
50
8
V
15
30
6
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
40
20
35
10
I
5
25
0
3
1
2
4
5
7
15
30
125
150
15
13
10
8
5
6
9
7
,
20 V
VGE = 10 V
TJ = 25
°
C
15 V
12.5 V
17.5 V
20 V
VGE = 10 V
TJ = 125
°
C
15 V
12.5 V
17.5 V
VCE = 100 V
5.0 S PULSE WIDTH
TJ = 125
°
C
25
°
C
IC = 8.0 A
6.0 A
4.0 A
VGE = 15 V
80 S PULSE WIDTH
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 8.0 A
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