- 您现在的位置：买卖IC网 > PDF目录378670 > MGY40N60D (MOTOROLA INC) Insulated Gate Bipolar Transistor with Anti-Parallel Diode PDF资料下载
参数资料
| 型号： | MGY40N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 66 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 247K |
| 代理商： | MGY40N60D |
5
Motorola TMOS Power MOSFET Transistor Device Data
I
i
VGE = 15 V
RGE = 20
TJ = 125
°
C
Figure 11. Turn–Off Losses versus
Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
T
4
2
1
0
75
25
0
100
Figure 12. Turn–Off Losses versus
Collector–to–Emitter Current
VCC = 360 V
VGE = 15 V
RG = 20
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
3
1
0
40
10
5
0
15
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
Figure 13. Typical Diode Forward Drop versus
Instantaneous Forward Current
VFM, FORWARD VOLTAGE DROP (VOLTS)
100
0.1
1.2
0.4
0
10
1
0.8
Figure 14. Reverse Biased Safe
Operating Area
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
1000
1
1
50
125
150
IC = 40 A
T
TJ = 125
°
C
TJ = 25
°
C
100
10
2
20
25
3
30
35
30 A
20 A
相关PDF资料 |
PDF描述 |
|---|---|
| MGY40N60 | Insulated Gate Bipolar Transistor |
| MHL19936 | PCS BAND RF LINEAR LDMOS AMPLIFIER |
| MHL21336 | 3G BAND RF LINEAR LDMOS AMPLIFIER |
| MHL8015 | UHF Lineat Amplifier |
| MHL8018 | UHF Lineat Amplifier |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGYM24 | 制造商:APEM 功能描述:MIDG GRV MULTILED 24V YLW |
| MGZ20-250 | 制造商:SMC Corporation of America 功能描述:CYL, GUIDE, DBL POWER |
| MGZ2310TA-3 | 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:ULTRA HIGH BRIGHTNESS OVAL-SHAPED GREEN LED LAMP |
| MGZ30562001 | 制造商:LG Corporation 功能描述:Ring |
| MGZ36446401 | 制造商:LG Corporation 功能描述:Ring |
发布紧急采购，3分钟左右您将得到回复。