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参数资料
| 型号： | MGY40N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 66 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 247K |
| 代理商： | MGY40N60D |
4
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Coes
12000
0
25
20
15
5
0
Qg, TOTAL GATE CHARGE (nC)
20
10
0
250
50
0
C
8000
10
TJ = 25
°
C
Cres
Cies
V
5
QT
Q1
Q2
TJ = 25
°
C
IC = 40 A
4000
150
100
VCE = 0 V
15
200
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
Figure 7. Total Switching Losses versus
Gate Resistance
RG, GATE RESISTANCE (OHMS)
T
8.5
6.5
4.5
2.5
50
30
20
10
40
Figure 8. Total Switching Losses versus
Junction Temperature
7.5
5.5
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
IC = 40 A
TJ, JUNCTION TEMPERATURE (
°
C)
T
7
1
150
75
25
0
100
5
3
VCC = 360 V
VGE = 15 V
RG = 20
50
125
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
7
5
0
40
15
5
0
6
4
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
2
10
Figure 10. Turn–Off Losses versus
Gate Resistance
RG, GATE RESISTANCE (OHMS)
T
4
2
0
50
40
20
10
1
30
IC = 40 A
IC = 40 A
3.5
20
25
3
1
30
35
3
30 A
20 A
30 A
20 A
30 A
20 A
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