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参数资料
| 型号： | MGY40N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 66 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 247K |
| 代理商： | MGY40N60D |
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
dIF/dt = 200 A/
μ
s)
trr
ta
tb
—
138
—
ns
(IF = 40 Adc, VR = 360 Vdc,
—
78
—
—
60
—
Reverse Recovery Stored Charge
QRR
trr
ta
tb
QRR
—
2.1
—
μ
C
Reverse Recovery Time
dIF/dt = 200 A/
μ
s, TJ = 125
°
C)
—
213
—
ns
(IF = 40 Adc, VR = 360 Vdc,
—
122
—
—
91
—
Reverse Recovery Stored Charge
—
4.9
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
″
from package to emitter bond pad)
LE
—
13
—
nH
VCE = 100 V
5
μ
s PULSE WIDTH
VGE = 20 V
TJ = 25
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
I
12.5 V
17.5 V
15 V
10 V
80
40
20
0
5
4
2
0
VGE = 20 V
TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
12.5 V
17.5 V
15 V
10 V
80
40
20
0
5
3
2
1
0
TJ = 125
°
C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
80
40
20
0
10
8
7
6
5
9
25
°
C
VGE = 15 V
80
μ
s PULSE WIDTH
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TJ, JUNCTION TEMPERATURE (
°
C)
3
2.6
1.8
150
50
0
–50
2.2
100
V
1
3
4
IC = 40 A
60
60
60
TYPICAL ELECTRICAL CHARACTERISTICS
30 A
20 A
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