参数资料
型号: MGSF3442VT1
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
中文描述: 4 A, 20 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 1/4页
文件大小: 86K
代理商: MGSF3442VT1
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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Part of the GreenLine
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature TSOP 6 Surface Mount Package Saves Board Space
Visit our Web Site at http://www.mot–sps.com/ospd
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
IDM
20
Vdc
Gate–to–Source Voltage — Continuous
±
8.0
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Pulsed Drain Current (tp
10
μ
s)
1.7
20
A
Total Power Dissipation @ TA = 25
°
C
Operating and Storage Temperature Range
PD
400
mW
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
300
°
C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
260
°
C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF3442XT1
7
8 mm embossed tape
3000
MGSF3442XT3
13
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGSF3442XT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318G–02, Style 1
TSOP 6 PLASTIC
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
rDS(on) = 58 m
(TYP)
Motorola Preferred Device
DD
D
G
DS
DRAIN
3
GATE
SOURCE
4
6
5
2
1
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