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参数资料
| 型号： | MGRB2025CT |
| 厂商： | MOTOROLA INC |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Power Manager Gallium Arsenide Power Rectifier |
| 中文描述： | 10 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE |
| 文件页数： | 1/6页 |
| 文件大小： | 156K |
| 代理商： | MGRB2025CT |
1
Motorola RF Device Data
Motorola, Inc. 1995
. . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity
protection diodes, these state-of-the-art devices have the following features:
Planar Epitaxial Construction
Nitride Passivation for Stable Blocking Characteristics
Monolithic Dual Die Construction – May be Paralleled for High Current Output
(10A per leg or 20A per package)
Epoxy Meets UL94, VO @ 1/8
″
Hyperfast and Soft Reverse Recovery Over Specified Temperature Range (15 ns)
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant & Terminal Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260
°
C Max. for 10 Seconds
Shipped 50 units per plastic tube
Available in 24mm Tape and Reel, 800 units/reel by adding a T4 suffix to the part number
Marking: MGRB2025CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
IDC
250
V
DC Forward Current
(TC = 95
°
C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 25
°
C)
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Per Leg
10
A
Per Leg
IFRM
20
A
Per Package
IFSM
40
A
Operating Junction Temperature and Storage Temperature
THERMAL CHARACTERISTICS
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
ELECTRICAL CHARACTERISTICS
TJ, Tstg
–55 to 175
°
C
Per Leg
Per Leg
R
θ
JC
R
θ
JA
3.1
53
°
C/W
Maximum Instantaneous Forward Voltage (1), see Figure 2
(IF = 5 A)
Per Leg
VF
TJ=25
°
C
2.2
1.5
TJ=125
°
C
2.5
1.6
V
(IF = 10 A)
Maximum Instantaneous Reverse Current, see Figure 4
(VR = 125 V)
Per Leg
IR
TJ=25
°
C
25
2
TJ=125
°
C
440
125
μ
A
(VR = 250 V)
Typical Reverse Recovery Time (2)
(VR = 200 V, IF = 10 A, di/dt = 200 A/
μ
s)
Per Leg
trr
TJ=25
°
C
11.8
12.2
TJ=125
°
C
12.0
12.2
ns
(VR = 200 V, IF = 5 A, di/dt = 200 A/
μ
s)
Typical Peak Reverse Recovery Current
(VR = 200 V, IF = 10 A, di/dt = 200 A/
μ
s)
Per Leg
IRM
TJ=25
°
C
1.4
1.5
TJ=125
°
C
1.4
1.5
A
(VR = 200 V, IF = 5 A, di/dt = 200 A/
μ
s)
Note: This data sheet contains advance information only and is subject to change without notice.
(1) Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%.
(2) trr measured projecting from 25% of IRM to ground.
Order this document
by MGRB2025CT/D
SEMICONDUCTOR TECHNICAL DATA
GALLIUM ARSENIDE
RECTIFIER
20 AMPERES
250 VOLTS
1
3
2, 4
CASE 418B–02
D2PAK
1
2, 4
3
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