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参数资料
| 型号： | MGY20N120D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 28 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 6/6页 |
| 文件大小： | 254K |
| 代理商： | MGY20N120D |
6
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 340G–02
TO–264
ISSUE E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MIN
2.8
19.3
4.7
0.93
1.9
2.2
5.45 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.1
2.15
6.1
2.8
MAX
2.9
20.3
5.3
1.48
2.1
2.4
MIN
1.102
0.760
0.185
0.037
0.075
0.087
0.215 BSC
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
MAX
1.142
0.800
0.209
0.058
0.083
0.102
INCHES
MILLIMETERS
3.0
0.78
18.8
11.4
4.75
2.6
3.5
2.35
6.5
3.2
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 5:
PIN 1.
GATE
COLLECTOR
EMITTER
2.
3.
0.25 (0.010)
M
T B
M
J
H
R
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010)
M
Y Q
S
1
2
3
–B–
–Q–
–Y–
–T–
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN
: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX
: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET
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