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参数资料
| 型号： | MGP20N35CL |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, 320 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 4/6页 |
| 文件大小： | 200K |
| 代理商： | MGP20N35CL |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Gate–to–Emitter and
Collector–to–Emitter Voltage vs Total Charge
Figure 8. Total Switching Losses
versus Gate Temperature
Qg, TOTAL GATE CHARGE (nC)
VG
RG, GATE RESISTANCE (OHMS)
0
1000
40
30
20
10
0
50
60
0
10
8
6
4
2
0
Figure 9. Total Switching Losses
versus Gate Resistance
Figure 10. Total Switching Losses
versus Case Temperature
RG, GATE RESISTANCE (OHMS)
T
TC, CASE TEMPERATURE (
°
C)
25
50
125
20
18
16
14
12
22
24
26
75
100
0
1000
50
40
30
20
10
0
Figure 11. Total Switching Losses
versus Collector Current
Figure 12. Latch Current versus Temperature
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
L
TEMPERATURE (
°
C)
0
25
16
12
8.0
4.0
0
20
50
75
100
125
5
10
15
20
25
20
15
10
5
2000
3000
4000
5000
20
30
40
2000
3000
4000
5000
S
S
25
20
15
10
5
S
60
50
40
20
0
S
6
4
10
30
6
5
4
3
2
1
0
T
T
10 mH
3 mH
VCC = 320 V
VGE = 5 V
RG = 1000
L = 200 H
TJ = 125
°
C
VDD = 320 V
VGE = 5 V
TJ = 25
°
C
IC = 20 A
TF
Td(off)
Eoff
TF
Td(off)
Eoff
VCC = 320 V
VGE = 5 V
RG = 1000
L = 200 H
IC = 20 A
TF
Td(off)
Eoff
VDD = 320 V
VGE = 5 V
TJ = 125
°
C
IC = 20 A
TF
Td(off)
Eoff
TJ = 25
°
C
IC = 20 A
Qg
Qgs
Qgd
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