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参数资料
| 型号： | MGY30N60D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 254K |
| 代理商： | MGY30N60D |
4
Motorola TMOS Power MOSFET Transistor Device Data
TJ = 25
°
C
IC = 30 A
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
VCE = 0 V
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Figure 7. Total Switching Losses versus
Gate Resistance
Coes
8000
0
25
20
15
5
0
Qg, TOTAL GATE CHARGE (nC)
20
15
10
0
150
120
90
30
0
RG, GATE RESISTANCE (OHMS)
T
6.4
4.8
3.2
0
50
30
20
10
40
Figure 8. Total Switching Losses versus
Junction Temperature
C
6000
4000
2000
10
TJ = 25
°
C
Cres
Cies
V
5
QT
Q2
5.6
4
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
IC = 30 A
TJ, JUNCTION TEMPERATURE (
°
C)
T 6.5
4.5
2.5
0.5
150
75
25
0
100
5.5
3.5
VCC = 360 V
VGE = 15 V
RG = 20
1.5
50
125
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
5
3
0
30
15
5
0
4
2
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
1
10
Figure 10. Turn–Off Losses versus
Gate Resistance
RG, GATE RESISTANCE (OHMS)
T
3
2
0
50
40
20
10
1
30
60
2.4
1.6
0.8
20
25
Q1
20 A
10 A
IC = 30 A
20 A
10 A
IC = 30 A
20 A
10 A
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