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参数资料
| 型号： | MGP20N14CL |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Internally Clamped, N-Channel IGBT |
| 中文描述： | 20 A, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 2/4页 |
| 文件大小： | 77K |
| 代理商： | MGP20N14CL |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Clamp Voltage
(IClamp = 10 mA, TJ = –40 to 150
°
C)
BVCES
135
Vdc
Zero Gate Voltage Collector Current
(VCE = 100 V, VGE = 0 V)
(VCE = 100 V, VGE = 0 V, TJ = 150
°
C)
ICES
—
—
—
—
10
100
A
Gate–Emitter Clamp Voltage (IG = 1 mA)
Gate–Emitter Leakage Current (VGE =
BVGES
IGES
10
Vdc
5 V, VCE = 0 V)
—
—
1.0
A
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
Threshold Temperature Coefficient (Negative)
VCE(th)
1.0
1.5
4.4
2.0
V
mV/
°
C
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 175
°
C)
VCE(on)
—
—
1.9
1.8
V
Forward Transconductance (VCE
15 V, IC = 10 A)
gfs
8.0
15
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
430
600
pF
Output Capacitance
—
182
250
Transfer Capacitance
—
48
100
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(VCC = 68 V,C
(CC
VGE = 5 V, RG = 9.1 )
68 V I
td(on)
tr
td(off)
tf
—
TBD
TBD
ns
Rise Time
—
TBD
TBD
Turn–Off Delay Time
,
—
TBD
TBD
Fall Time
—
TBD
TBD
Total Gate Charge
(VCC = 108 V, IC = 20 A,
VGE = 5 V)
108 V I
Qg
Qgs
Qgd
—
14
20
nC
Gate–Emitter Charge
—
3.0
—
Gate–Collector Charge
—
6.0
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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