- 您现在的位置：买卖IC网 > PDF目录378670 > MGP14N60E (MOTOROLA INC) Insulated Gate Bipolar Transistor PDF资料下载
参数资料
| 型号： | MGP14N60E |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 18 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件页数： | 3/6页 |
| 文件大小： | 125K |
| 代理商： | MGP14N60E |
3
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Gate–To–Emitter Voltage versus
Total Charge
6.0
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
8.0
0
10
0
13
17
5.0
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
30
20
10
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.3
2.1
1.9
1.7
1.5
0
15
5.0
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2400
1600
800
0
QG, TOTAL GATE CHARGE (nC)
20
0
20
16
12
4.0
0
40
I
I
C
V
0
2.0
4.0
2.0
4.0
6.0
20
30
7.0
9.0
11
25
50
100
75
125
150
C
15
25
20
80
60
8.0
V
I
,
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
°
C
25
°
C
VCE = 100 V
5 s PULSE WIDTH
VGE = 15 V
80 s PULSE WIDTH
IC = 10 A
5.0 A
7.5 A
Cies
Coes
Cres
TJ = 25
°
C
VGE = 0
QT
Q2
Q1
TJ = 25
°
C
VCC = 300 V
IC = 10 A
相关PDF资料 |
PDF描述 |
|---|---|
| MGP14N60E | SHORT CIRCUIT RATED LOW ON-VOLTAGE |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP15N60U | Insulated Gate Bipolar Transistor |
| MGP20N14CL | Internally Clamped, N-Channel IGBT |
| MGP20N14CL | SMARTDISCRETES Internally Clamped, N-Channel IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MGP15N35CL | 功能描述:IGBT 晶体管 15A 350V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N35CL_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK |
| MGP15N38CL | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶体管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
发布紧急采购，3分钟左右您将得到回复。