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参数资料
| 型号： | MGY25N120D |
| 厂商： | MOTOROLA INC |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
| 中文描述： | 38 A, 1200 V, N-CHANNEL IGBT, TO-264AA |
| 封装： | TO-264, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 256K |
| 代理商： | MGY25N120D |
5
Motorola TMOS Power MOSFET Transistor Device Data
I
VGE = 15 V
RGE = 20
TJ = 125
°
C
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
1000
1
1
100
10
t, TIME (s)
r
T
1.0
0.1
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
Figure 12. Thermal Response
TJ = 25
°
C
VFM, FORWARD VOLTAGE DROP (VOLTS)
I
F
50
30
0
4
3
1
0
2
40
20
10
TJ = 125
°
C
5
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