参数资料
型号: MGY40N60
厂商: MOTOROLA INC
元件分类: IGBT 晶体管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 66 A, 600 V, N-CHANNEL IGBT, TO-264
封装: TO-264, 3 PIN
文件页数: 5/6页
文件大小: 205K
代理商: MGY40N60
5
Motorola TMOS Power MOSFET Transistor Device Data
PACKAGE DIMENSIONS
CASE 340G–02
TO–264
ISSUE E
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
MIN
2.8
19.3
4.7
0.93
1.9
2.2
5.45 BSC
2.6
0.43
17.6
11.0
3.95
2.2
3.1
2.15
6.1
2.8
MAX
2.9
20.3
5.3
1.48
2.1
2.4
MIN
1.102
0.760
0.185
0.037
0.075
0.087
0.215 BSC
0.102
0.017
0.693
0.433
0.156
0.087
0.122
0.085
0.240
0.110
MAX
1.142
0.800
0.209
0.058
0.083
0.102
INCHES
MILLIMETERS
3.0
0.78
18.8
11.4
4.75
2.6
3.5
2.35
6.5
3.2
0.118
0.031
0.740
0.449
0.187
0.102
0.137
0.093
0.256
0.125
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
STYLE 5:
PIN 1.
GATE
COLLECTOR
EMITTER
2.
3.
0.25 (0.010)
M
T B
M
J
H
R
N
U
L
P
A
K
C
E
F
D
G
W
2 PL
3 PL
0.25 (0.010)
M
Y Q
S
1
2
3
–B–
–Q–
–Y–
–T–
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