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参数资料
| 型号： | MGSF1N02ELT1G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | LEAD FREE, CASE 318-08, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 136K |
| 代理商： | MGSF1N02ELT1G |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MGSF1N02ELT1/D
MGSF1N02ELT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
NChannel SOT23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dcdc converters and power management in portable
and batterypowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
Features
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT23 Surface Mount Package Saves Board Space
PbFree Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
20
Vdc
GatetoSource Voltage Continuous
VGS
± 8.0
Vdc
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
750
2000
mA
Total Power Dissipation @ TA = 25°C
PD
400
mW
Operating and Storage Temperature Range
TJ, Tstg 55 to 150
°C
Thermal Resistance JunctiontoAmbient
RqJA
300
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
1
2
NChannel
750 mAMPS, 20 VOLTS
RDS(on) = 85 mW
Preferred devices are recommended choices for future use
and best overall value.
NE
= Specific Device Code
M
= Date Code*
G
= PbFree Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
http://onsemi.com
(Note: Microdot may be in either location)
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
1
Drain
1
Gate
2
Source
NE M G
G
Device
Package
Shipping
ORDERING INFORMATION
MGSF1N02ELT1
SOT23
3000/Tape & Reel
MGSF1N02ELT1G
SOT23
PbFree
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
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PDF描述 |
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| MGSF2P02HDR2 | 1.3 A, 20 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGSF1N02ELT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:N-CHANNEL LOGIC LEVEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1N02LT1 | 功能描述:MOSFET 20V 750mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MGSF1N02LT1 | 制造商:ON Semiconductor 功能描述:MOSFET N SOT-23 |
| MGSF1N02LT1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 |
| MGSF1N02LT1G | 功能描述:MOSFET NFET SOT23 20V 75mA 90mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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