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参数资料
| 型号： | MGSF2P02HDR2 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 1.3 A, 20 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | PLASTIC, TSOP-6 |
| 文件页数： | 1/8页 |
| 文件大小： | 179K |
| 代理商： | MGSF2P02HDR2 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Product Preview
Medium Power Surface Mount Products
TMOS Field Effect Transistor
P–Channel Enhancement–Mode MOSFET
This device represents a series of power MOSFETs which
utilizes Motorola’s High Cell Density HDTMOS process to achieve
the lowest on–resistance per silicon area. The series of products
are capable of withstanding high energy in the avalanche and
commutation modes and the drain–to–source diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency
is important. Typical applications are dc–dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also
be used for low voltage motor controls in mass storage products
such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Miniature TSOP6 Surface Mount Package — Saves Board Space
Low Profile for Thin Applications such as PCMCIA Cards
Very Low RDS(on) Provides Higher Efficiency and Expands
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
IDSS Specified at Elevated Temperatures
Avalanche Energy Specified
Package Mounting Information Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
20
V
Gate–to–Source Voltage
VGS
±9
V
Drain Current — Continuous
Drain Current — Single Pulse (tp ≤ 10 s)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (1)
ID
IDM
PD
RqJA
1.3
10
400
210
312
A
mW
°C/W
Drain Current — Continuous
Drain Current — Single Pulse (tp ≤ 10 s)
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 85°C
Thermal Resistance — Junction to Ambient (2)
ID
IDM
PD
RqJA
2.9
15
2.0
1.0
62.5
A
W
°C/W
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain Source Avalanche Energy
VDD = 20 V, VGS = 4.5 Vpk, IL = 3.6 Apk, L = 25 mH, RG = 25 W
EAS
160
mJ
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 5 seconds
TL
260
°C
(1) Minimum FR–4 or G–10 PCB, Operating to Steady State.
(2) Mounted onto a 2
″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Operating time ≤5 seconds.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MGSF2P02HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1998
DRAIN
SOURCE
GATE
CASE 318G–01, Style 1
TSOP 6 PLASTIC
MGSF2P02HD
POWER MOSFET
P–CHANNEL
1.3 AMPERES
20 VOLTS
RDS(on) = 175 mOHMS
D
G
D
S
3
4
12 56
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