参数资料
型号: MGSF2P02HDR2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 1.3 A, 20 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, TSOP-6
文件页数: 2/8页
文件大小: 179K
代理商: MGSF2P02HDR2
MGSF2P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
20
Vdc
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
10
A
Gate–to–Source Leakage Current
(VGS = ± 9.0 Vdc, VDS = 0 Vdc)
IGSS
±100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
Temperature Coefficient (Negative)
VGS(th)
0.7
0.95
2.2
1.4
Vdc
mV/
°C
Drain–to–Source On–Voltage
(VGS = 4.5 Vdc, ID = 1.3 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)
RDS(on)
145
220
175
280
m
W
Forward Transconductance
(VDS = 10 Vdc, ID = 0.6 Adc)
gFS
1.3
2.0
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
15 Vdc V
0 Vdc
Ciss
225
pF
Output Capacitance
(VDS = 15 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
150
Transfer Capacitance
f = 1.0 MHz)
Crss
60
SWITCHING CHARACTERISTICS
Turn–On Delay Time
(V
10 Vd
I
1 2 Ad
td(on)
15
nsec
Rise Time
(VDS = 10 Vdc, ID = 1.2 Adc,
VGS =4 5Vdc
tr
27
Turn–Off Delay Time
VGS = 4.5 Vdc,
RG = 6.0 )
td(off)
60
Fall Time
G
)
tf
72
Turn–On Delay Time
(V
10 Vd
I
0 6 Ad
td(on)
20
Rise Time
(VDD = 10 Vdc, ID = 0.6 Adc,
VGS =2 7Vdc
tr
94
Turn–Off Delay Time
VGS = 2.7 Vdc,
RG = 6.0 )
td(off)
49
Fall Time
G
)
tf
76
Gate Charge
(V
16 Vd
I
1 2 Ad
QT
5.3
7.5
nC
(VDS = 16 Vdc, ID = 1.2 Adc,
Q1
0.7
( DS
, D
,
VGS = 4.5 Vdc)
Q2
2.6
Q3
1.9
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.2 Adc, VGS = 0 Vdc)
VSD
0.89
0.72
1.1
Vdc
Reverse Recovery Time
(I
1 2 Ad
V
0 Vd
trr
86
nsec
Reverse Recovery Time
(I
1 2 Ad
V
0 Vd
trr
86
nsec
(IS = 1.2 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
ta
27
dIS/dt = 100 A/s)
tb
59
QRR
0.115
C
NOTE: Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
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