参数资料
型号: MGSF2P02HDR2
厂商: MOTOROLA INC
元件分类: JFETs
英文描述: 1.3 A, 20 V, 0.175 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: PLASTIC, TSOP-6
文件页数: 3/8页
文件大小: 179K
代理商: MGSF2P02HDR2
MGSF2P02HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
2.0
4.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
2.0
4.0
10
0.4
0
Figure 3. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.1
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance versus Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage Current
versus Voltage
VDS ≥ 10 V
100
°C
25
°C
TJ = – 55°C
0.3
6.0
8.0
– 50
0
50
100
150
3.0
1.0
2.0
4.0
3.0
0
1.0
2.0
4.0
0.2
0.6
0.1
0
1.0
2.0
3.0
4.0
0
10
0
4.0
8.0
12
VGS = 4.5 V
ID = 0.8 A
1.5
20
0
0.3
0.2
3.0
ID = 1.3 A
TJ = 25°C
4.5 V
VGS = 2.7 V
(NORMALIZED)
– 25
25
75
125
0.5
2.0
VGS = 0 V
I DSS
,LEAKAGE
(nA)
100
°C
1.0
TJ = 25°C
1.7 V
VGS = 8.0 V
0
0.4
0.8
1.2
1.6
2.0
16
1.0
25
°C
0.1
0.5
0.4
1.9 V
2.1 V
2.3 V
2.5 V
2.7 V
2.9 V
3.1 V
4.5 V
3.7 V
3.3 V
TJ = 125°C
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