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| 型号： | MGSF1N02LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 750MA SOT23 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 125pF @ 5V |
| 功率 - 最大： | 400mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | MGSF1N02LT1GOSDKR |
MGSF1N02L, MVGSF1N02L
Power MOSFET
750 mAmps, 20 Volts
N ? Channel SOT ? 23
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc ? dc converters and power management in portable
and battery ? powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
http://onsemi.com
750 mAMPS, 20 VOLTS
R DS(on) = 90 m W
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? MVGSF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable*
? These Devices are Pb ? Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
1
N ? Channel
3
2
MARKING DIAGRAM/
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Symbol
V DSS
V GS
Value
20
± 20
Unit
Vdc
Vdc
PIN ASSIGNMENT
3
Drain
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature Range
I D
I DM
P D
T J , T stg
750
2000
400
? 55 to 150
mA
mW
° C
1
SOT ? 23
CASE 318
STYLE 21
N2 M G
G
1 2
Gate Source
Thermal Resistance, Junction ? to ? Ambient R q JA 300 ° C/W
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes, 1/8 ″ from case for 10 seconds
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
N2 = Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
MGSF1N02LT1G
MVGSF1N02LT1G*
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
(Pb ? Free)
Shipping ?
3000 / Tape &
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 6
1
Publication Order Number:
MGSF1N02LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGSF1N02LT3 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts |
| MGSF1N02LT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23 |
| MGSF1N03L | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:Power MOSFET 30 V, 2.1 A, Single Na??Channel, SOTa??23 |
| MGSF1N03LT1 | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MGSF1N03LT1G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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