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| 型号： | MGSF1N03LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.6A SOT-23 |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 1.2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 140pF @ 5V |
| 功率 - 最大： | 420mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | MGSF1N03LT1OSCT |
MGSF1N03L, MVGSF1N03L
Power MOSFET
30 V, 2.1 A, Single N ? Channel, SOT ? 23
These miniature surface mount MOSFETs low R DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc ? dc converters and power management in portable
and battery ? powered products such as computers, printers, PCMCIA
http://onsemi.com
cards, cellular and cordless telephones.
Features
? Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Miniature SOT ? 23 Surface Mount Package Saves Board Space
? AEC ? Q101 Qualified and PPAP Capable ? MVGSF1N03LT1
? These Devices are Pb ? Free and are RoHS Compliant
V (BR)DSS
30 V
R DS(on) TYP
80 m W @ 10 V
125 m W @ 4.5 V
N ? Channel
D
I D MAX
2.1 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G
Continuous Drain
Current R q JL
Power Dissipation
R q JL
Continuous Drain
Current (Note 1)
Steady
State
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
I D
2.1
1.5
0.69
1.6
1.2
A
W
A
S
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
Power Dissipation
(Note 1)
Pulsed Drain Current
ESD Capability
(Note 3)
T A = 25 ° C
t p = 10 m s
C = 100 pF,
RS = 1500 W
P D
I DM
ESD
0.42
6.0
125
W
A
V
1
SOT ? 23
CASE 318
STYLE 21
N3 M G
G
1 2
Gate Source
Operating Junction and Storage Temperature
Source Current (Body Diode)
T J , T STG
I S
? 55 to 150
2.1
° C
A
N3
M
G
= Specific Device Code
= Date Code*
= Pb ? Free Package
Lead Temperature for Soldering Purposes
(1/8” from case for 10 sec)
THERMAL RESISTANCE RATINGS
Parameter
T L
Symbol
260
Max
° C
Unit
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Junction ? to ? Foot ? Steady State
Junction ? to ? Ambient ? Steady State (Note 1)
Junction ? to ? Ambient ? t < 10 s (Note 1)
R q JL
R q JA
R q JA
180
300
250
° C/W
Device
MGSF1N03LT1G
Package
SOT ? 23
Pb ? Free
Shipping ?
3000 / Tape &
Reel
Junction ? to ? Ambient ? Steady State (Note 2) R q JA 400
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 650 mm 2 , 1 oz. Cu pad size.
2. Surface ? mounted on FR4 board using 50 mm 2 , 1 oz. Cu pad size.
3. ESD Rating Information: HBM Class 0.
MGSF1N03LT3G SOT ? 23 10000 / Tape &
(Pb ? Free) Reel
MVGSF1N03LT1G SOT ? 23 3000 / Tape &
(Pb ? Free) Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 10
1
Publication Order Number:
MGSF1N03LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MGSF1N03LT1G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MGSF1N03LT1G-CUT TAPE | 制造商:ON 功能描述:MGSF Series N-Channel 30 V 80 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23 |
| MGSF1N03LT3 | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MGSF1N03LT3G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MGSF1P02 | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Power MOSFET P-Channel |
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