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参数资料
| 型号： | MGSF3454VT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TSOP-6 |
| 文件页数： | 2/6页 |
| 文件大小： | 125K |
| 代理商： | MGSF3454VT3 |
MGSF3454VT1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 A)
V(BR)DSS
30
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70°C)
IDSS
—
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
±100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
—
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 4.2 A)
(VGS = 4.5 Vdc, ID = 3.4 A)
rDS(on)
—
0.05
0.07
0.065
0.095
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
90
—
pF
Output Capacitance
(VDS = 5.0 V)
Coss
—
50
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
10
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
1 0 A
td(on)
—
10
20
ns
Rise Time
(VDD = 10 Vdc, ID = 1.0 A,
tr
—
15
30
Turn–Off Delay Time
( DD
, D
,
VGEN = 10 V, RL = 10 )
td(off)
—
20
35
Fall Time
tf
—
10
20
Gate Charge
QT
—
15
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
—
1.0
A
Pulsed Current
ISM
—
5.0
A
Forward Voltage(2)
VSD
—
1.2
V
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
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