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参数资料
| 型号： | MGSF3454VT3 |
| 厂商： | MOTOROLA INC |
| 元件分类： | JFETs |
| 英文描述： | 4.2 A, 30 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TSOP-6 |
| 文件页数： | 3/6页 |
| 文件大小： | 125K |
| 代理商： | MGSF3454VT3 |
MGSF3454VT1
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
012
34
0
4
8
12
20
VDS, DRAIN–TO–SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
I D
,DRAIN
CURRENT
(A)
01
23
4
0
4
8
12
I D
,DRAIN
CURRENT
(A)
VGS, GATE–TO–SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
04
8
12
16
20
0
0.04
0.08
0.12
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (A)
Figure 3. On–Resistance vs. Drain Current
Figure 4. Capacitance
Figure 5. Gate Charge
TJ = –55°C
25
°C
125
°C
16
3 V
5 V
4 V
16
20
56
0.16
0.20
VGS = 4.5 V
R
DS(on)
,ON–RESIST
ANCE
(OHMS)
(NORMALIZED)
–50
0.75
1.00
1.25
1.50
TJ, JUNCTION TEMPERATURE (°C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 4.2 A
1.75
125
VGS = 10, 9, 8, 7, 6V
VGS = 10 V
Figure 6. On–Resistance vs. Junction Temperature
612
18
VDS – DRAIN–TO–SOURCE VOLTAGE (V)
C,
CAP
ACIT
ANCE
(pF)
Ciss
Coss
Crss
24
30
V
GS
,GA
TE–T
O–SOURCE
VOL
TAGE
(V)
0
Qg, TOTAL GATE CHARGE (nC)
1.5
3.0
4.5
6.0
9.0
VDS = 15 V
ID = 4.2 A
0
10
8
6
4
2
7.5
0
80
160
240
320
400
480
560
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